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Chung, Il-Sug
Nano-Optoelectronics Lab.
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dc.citation.conferencePlace US -
dc.citation.conferencePlace Flagstaff, AZ -
dc.citation.endPage 1560 -
dc.citation.startPage 1559 -
dc.citation.title PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 -
dc.citation.volume 772 -
dc.contributor.author Chung, Il-Sug -
dc.contributor.author Lee, Yong Tak -
dc.contributor.author Kim, Jae-Eun -
dc.contributor.author Park, Hae Yong -
dc.date.accessioned 2023-12-20T05:39:21Z -
dc.date.available 2023-12-20T05:39:21Z -
dc.date.created 2018-02-27 -
dc.date.issued 2004-07-26 -
dc.description.abstract Reflectivity of a quarter wave mirror (QWM) can be controlled by choosing the outermost layer of the QWM appropriately. For a GaAs/Al 0.75Ga0.25As QWM, depositing a TiO2 layer as the incoming outermost layer decreases the reflectivity to the same degree as removing 18.5 layers. Therefore, an efficient method to fabricate resonant cavity enhanced photodiodes for bi-directional optical interconnects is proposed. This method needs no etching process for quantum efficiency tuning, while giving a quantum efficiency of approximately 90% using currently available deposition technique. -
dc.identifier.bibliographicCitation PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.1559 - 1560 -
dc.identifier.doi 10.1063/1.1994712 -
dc.identifier.isbn 978-073540257-7 -
dc.identifier.issn 0094-243X -
dc.identifier.scopusid 2-s2.0-33749462635 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/37440 -
dc.identifier.url http://aip.scitation.org/doi/abs/10.1063/1.1994712 -
dc.language 영어 -
dc.publisher PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 -
dc.title Improvement of fabrication method of resonant cavity enhanced photodiodes for bi-directional optical interconnects -
dc.type Conference Paper -
dc.date.conferenceDate 2004-07-26 -

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