dc.citation.conferencePlace |
SI |
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dc.citation.conferencePlace |
Nanyang |
- |
dc.citation.endPage |
96 |
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dc.citation.startPage |
95 |
- |
dc.citation.title |
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 |
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dc.contributor.author |
Chung, Il-Sug |
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dc.contributor.author |
Lee, Yong Tak |
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dc.date.accessioned |
2023-12-20T05:08:02Z |
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dc.date.available |
2023-12-20T05:08:02Z |
- |
dc.date.created |
2018-02-27 |
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dc.date.issued |
2006-09-11 |
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dc.description.abstract |
Approximating a distributed Bragg reflector (DBR) of intracavity-contacted VCSELs by using an electrically-averaged single layer leads to un-realistic results about current crowding effect. Keeping one or two pairs of constituting layers of DBRs in contact with the nearby N- and P-contact layers from being approximated leads to more realistic results |
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dc.identifier.bibliographicCitation |
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, pp.95 - 96 |
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dc.identifier.doi |
10.1109/NUSOD.2006.306758 |
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dc.identifier.isbn |
978-078039755-2 |
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dc.identifier.scopusid |
2-s2.0-42649145407 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/37438 |
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dc.identifier.url |
http://ieeexplore.ieee.org/document/4098798/ |
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dc.language |
영어 |
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dc.publisher |
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 |
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dc.title |
Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSELs |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2006-09-11 |
- |