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Chung, Il-Sug
Nano-Optoelectronics Lab.
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dc.citation.conferencePlace SI -
dc.citation.conferencePlace Nanyang -
dc.citation.endPage 96 -
dc.citation.startPage 95 -
dc.citation.title 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 -
dc.contributor.author Chung, Il-Sug -
dc.contributor.author Lee, Yong Tak -
dc.date.accessioned 2023-12-20T05:08:02Z -
dc.date.available 2023-12-20T05:08:02Z -
dc.date.created 2018-02-27 -
dc.date.issued 2006-09-11 -
dc.description.abstract Approximating a distributed Bragg reflector (DBR) of intracavity-contacted VCSELs by using an electrically-averaged single layer leads to un-realistic results about current crowding effect. Keeping one or two pairs of constituting layers of DBRs in contact with the nearby N- and P-contact layers from being approximated leads to more realistic results -
dc.identifier.bibliographicCitation 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, pp.95 - 96 -
dc.identifier.doi 10.1109/NUSOD.2006.306758 -
dc.identifier.isbn 978-078039755-2 -
dc.identifier.scopusid 2-s2.0-42649145407 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/37438 -
dc.identifier.url http://ieeexplore.ieee.org/document/4098798/ -
dc.language 영어 -
dc.publisher 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 -
dc.title Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSELs -
dc.type Conference Paper -
dc.date.conferenceDate 2006-09-11 -

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