File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

백정민

Baik, Jeong Min
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.endPage 2443 -
dc.citation.number 6 -
dc.citation.startPage 2438 -
dc.citation.title CRYSTAL GROWTH & DESIGN -
dc.citation.volume 11 -
dc.contributor.author Yu, Hak Ki -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Lee, Jong-Lam -
dc.date.accessioned 2023-12-22T06:09:26Z -
dc.date.available 2023-12-22T06:09:26Z -
dc.date.created 2013-06-12 -
dc.date.issued 2011-06 -
dc.description.abstract Epitaxial growth of ZnO film on Si(111) substrates using an MgO interfacial layer has been investigated. The MgO layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si, producing a clear interface. A domain-matched structure with mixed 4/3 and 5/4 domains was formed at the interface of Si and MgO to achieve the lowest domain mismatch. Moreover, the epitaxial ZnO film was grown on a MgO buffer layer with a domain matched structure of 11/12 domains, resulting in an (0001)[1 (2) over bar 10](ZnO)parallel to(111)[1 (1) over bar0](MgO)parallel to(111)[1 (1) over bar0](Si) epitaxial relation, The high crystallinity of ZnO film grown on MgO/Si shows good optical performance with strong photoluminescence and improved Hall mobility. -
dc.identifier.bibliographicCitation CRYSTAL GROWTH & DESIGN, v.11, no.6, pp.2438 - 2443 -
dc.identifier.doi 10.1021/cg200203s -
dc.identifier.issn 1528-7483 -
dc.identifier.scopusid 2-s2.0-79958010048 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3725 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79958010048 -
dc.identifier.wosid 000291074600053 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate -
dc.type Article -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Crystallography; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Crystallography; Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.