dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Baltimore, Maryland, U.S.A. |
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dc.citation.title |
APS March Meeting 2016 |
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dc.contributor.author |
Park, Kibog |
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dc.contributor.author |
Jin, Han Byul |
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dc.contributor.author |
Jung, Sungchul |
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dc.contributor.author |
Kim, Junhyoung |
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dc.contributor.author |
Chae, Dong-Hun |
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dc.contributor.author |
Kim, Wan-Seop |
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dc.contributor.author |
Park, Jaesung |
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dc.date.accessioned |
2023-12-19T21:08:04Z |
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dc.date.available |
2023-12-19T21:08:04Z |
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dc.date.created |
2017-01-13 |
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dc.date.issued |
2016-03-14 |
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dc.description.abstract |
High quality epitaxial graphene (EG) was grown on a Si-face hexagonal SiC substrate by capping the surface with a metal plate (Molybdenum, Tungsten) during UHV annealing. The growth temperature was ∼ 950 degree C, significantly lower than the conventional UHV annealing. The crystallinity of EG film was examined with Raman spectrum measurements. Almost no D-peak and a large narrow 2D-peak ensure that a thin (mono- or bi-layer) EG film was grown with a negligible number of defects. The electrical properties of EG film were also characterized by performing magnetotransport measurements with Hall-bar structures. The carrier type was found to be n-type, the sheet carrier density be (3.6-9.2)x10\textasciicircum 12 /cm\textasciicircum 2, and the Hall mobility be \textasciitilde 2100 cm\textasciicircum 2/Vs. Due to the relatively high carrier density, the Quantum Hall Effect was observed only for high filling factors up to 14 T. However, clear Shubnikov-de-Hass oscillations were observed, indicating that the random carrier scattering due to impurities or defects is minimal in the EG film grown with metal plate capping. |
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dc.identifier.bibliographicCitation |
APS March Meeting 2016 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/36893 |
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dc.identifier.url |
https://meetings.aps.org/Meeting/MAR16/Session/B15.13 |
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dc.language |
영어 |
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dc.publisher |
APS March Meeting 2016 |
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dc.title |
Magnetotransport of Epitaxial Graphene on Hexagonal SiC Surface Grown with Metal Plate Capping |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2016-03-14 |
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