dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Los Angeles, U.S.A. |
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dc.citation.title |
APS March Meeting 2018 |
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dc.contributor.author |
Yoon, Hoon Hahn |
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dc.contributor.author |
Song, Wonho |
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dc.contributor.author |
Jung, Sungchul |
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dc.contributor.author |
Kim, Junhyung |
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dc.contributor.author |
Mo, Kyuhyung |
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dc.contributor.author |
Jeong, Hu Young |
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dc.contributor.author |
Lee, Jong Hoon |
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dc.contributor.author |
Park, Kibog |
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dc.date.accessioned |
2023-12-19T17:36:48Z |
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dc.date.available |
2023-12-19T17:36:48Z |
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dc.date.created |
2019-01-04 |
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dc.date.issued |
2018-03-07 |
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dc.description.abstract |
We report the direct observation revealing that the electric dipole layer due to the chemical interaction at metal/graphene interface and the doping of graphene can induce the negative Fermi-level pinning effect in metal/graphene/n-GaAs(001) junction made on a GaAs substrate containing regions with low interface-trap density in combinational manners. The graphene insertion layer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The change of electrostatic potential across the metal/graphene interface due to the chemical interaction dipole layer and the doping of graphene is found to cause the negative Fermi-level pinning effect, supported by the Schottky barrier decreasing as metal work-function increasing. The low Schottky barrier patches with very small total areal fraction are considered to serve as preferred paths for electron transport through metal/graphene/n-GaAs(001) junctions. This work provides an experimental method to form Schottky contacts (metal/GaAs) and Ohmic contacts (metal/graphene/GaAs) simultaneously on a GaAs substrate covered partially with graphene by using identical metal electrodes. *Supported by NRF in Korea (2016R1A2B4014762, 2016M1A3A3A02017648) |
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dc.identifier.bibliographicCitation |
APS March Meeting 2018 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/36634 |
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dc.language |
영어 |
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dc.publisher |
American Physical Society |
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dc.title |
Negative Fermi-level Pinning Effect Observed in Metal/GaAs Junction with Graphene Insertion Layer |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2018-03-05 |
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