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Ko, Hyunhyub
Functional Nanomaterials & Devices Lab
Research Interests
  • Functional nanomaterials, flexible electronics, electronic skins, wearable sensors


Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

DC Field Value Language Ko, Hyunhyub ko Takei, Kuniharu ko Kapadia, Rehan ko Chuang, Steven ko Fang, Hui ko Leu, Paul W. ko Ganapathi, Kartik ko Plis, Elena ko Kim, Ha Sul ko Chen, Szu-Ying ko Madsen, Morten ko Ford, Alexandra C. ko Chueh, Yu-Lun ko Krishna, Sanjay ko Salahuddin, Sayeef ko Javey, Ali ko 2014-04-10T02:15:44Z - 2013-07-09 ko 2010-11 -
dc.identifier.citation NATURE, v.468, no.7321, pp.286 - 289 ko
dc.identifier.issn 0028-0836 ko
dc.identifier.uri -
dc.identifier.uri ko
dc.description.abstract Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance(1-8). In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied(7,9,10): such devices combine the high mobility of III-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored(9,11-13)-but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO(2) substrates. As a parallel with silicon-on-insulator (SOI) technology(14), we use 'XOI' to represent our compound semiconductoron-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO(x) layer (similar to 1 nm thick). The fabricated field-effect transistors exhibit a peak transconductance of similar to 1.6 mS mu m(-1) at a drain-source voltage of 0.5 V, with an on/off current ratio of greater than 10,000. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.subject CIRCUITS ko
dc.subject DENSITY ko
dc.subject DEVICES ko
dc.subject INAS ko
dc.title Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-78149440901 ko
dc.identifier.wosid 000284051000047 ko
dc.type.rims ART ko
dc.description.scopustc 128 * 2014-07-12 *
dc.identifier.doi 10.1038/nature09541 ko
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