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dc.citation.conferencePlace US -
dc.citation.conferencePlace Long Beach, CA -
dc.citation.endPage 21 -
dc.citation.startPage 16 -
dc.citation.title IEEE International Symposium on Electromagnetic Compatibility (EMC 2011) -
dc.contributor.author Han, Ki Jin -
dc.contributor.author Xie, Biancun -
dc.contributor.author Swaminathan, Madhavan -
dc.contributor.author Xie, Jianyong -
dc.date.accessioned 2023-12-20T03:05:58Z -
dc.date.available 2023-12-20T03:05:58Z -
dc.date.created 2013-07-17 -
dc.date.issued 2011-08-14 -
dc.description.abstract This paper investigates the coupling effect between through-silicon vias (TSVs) in large TSV array structures. A coupling analysis method for large TSV arrays is proposed. Using this method the importance of coupling between TSVs for low resistivity silicon substrates is quantified both in the frequency and time domain. This has been compared with high resistivity silicon substrates. The comparison between the two indicates the importance of jitter and voltage analysis in TSV arrays for low resistivity silicon substrates due to enhanced coupling. -
dc.identifier.bibliographicCitation IEEE International Symposium on Electromagnetic Compatibility (EMC 2011), pp.16 - 21 -
dc.identifier.doi 10.1109/ISEMC.2011.6038277 -
dc.identifier.issn 1077-4076 -
dc.identifier.scopusid 2-s2.0-80054753153 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/35733 -
dc.identifier.url https://ieeexplore.ieee.org/document/6038277 -
dc.language 영어 -
dc.publisher IEEE -
dc.title Coupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3D systems -
dc.type Conference Paper -
dc.date.conferenceDate 2011-08-14 -

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