dc.citation.conferencePlace |
JA |
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dc.citation.title |
International Conference on Solid State Devices and Materials |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.contributor.author |
Shin, Sunhae |
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dc.contributor.author |
Cho, Seongjae |
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dc.contributor.author |
Lee, Jung-Hee |
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dc.contributor.author |
Kang, In Man |
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dc.date.accessioned |
2023-12-20T01:41:06Z |
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dc.date.available |
2023-12-20T01:41:06Z |
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dc.date.created |
2013-07-17 |
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dc.date.issued |
2012-09-17 |
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dc.description.abstract |
In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y-and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y-and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime. |
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dc.identifier.bibliographicCitation |
International Conference on Solid State Devices and Materials |
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dc.identifier.doi |
10.7567/JJAP.52.04CC14 |
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dc.identifier.issn |
0021-4922 |
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dc.identifier.scopusid |
2-s2.0-84880789616 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/35685 |
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dc.identifier.url |
http://iopscience.iop.org/article/10.7567/JJAP.52.04CC14/meta |
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dc.language |
영어 |
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dc.publisher |
The Japan Society of Applied P |
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dc.title |
Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2012-09-12 |
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