TCAD modeling and simulation of non-resonant plasmonic THz detector based on asymmetric silicon MOSFETs

Abstract

We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (RV) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on RV, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced RV according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.