dc.citation.conferencePlace |
HK |
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dc.citation.conferencePlace |
Hong Kong |
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dc.citation.title |
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 |
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dc.contributor.author |
Choe, Mun Seok |
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dc.contributor.author |
Lee, Kyu-Sup |
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dc.contributor.author |
Yu, Nan Ei |
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dc.contributor.author |
Choi, EunMi |
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dc.date.accessioned |
2023-12-19T22:07:01Z |
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dc.date.available |
2023-12-19T22:07:01Z |
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dc.date.created |
2016-01-06 |
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dc.date.issued |
2015-08-24 |
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dc.description.abstract |
Photo-excited semiconductor switching system for fast control of millimeter wave is developed and tested with an oversized corrugated horn (D/ λ > 10) and quasi-optical mirror setup. Semi-insulating GaAs (100) having direct band-gap shows fast switch ON-OFF (<; 100 ns) whereas semi-insulating Si (100) having indirect band-gap shows fast switch ON (<; 100 ns) and slow switch OFF (<; 1 ms) for the millimeter-wave regime. |
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dc.identifier.bibliographicCitation |
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 |
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dc.identifier.doi |
10.1109/IRMMW-THz.2015.7327945 |
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dc.identifier.scopusid |
2-s2.0-84969135142 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/35496 |
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dc.identifier.url |
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7327945&tag=1 |
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dc.language |
영어 |
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dc.publisher |
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 |
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dc.title |
The experimental results of fast switching system for millimeter wave transmission using photo-excited semiconductor |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2015-08-23 |
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