File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Kyoto | - |
| dc.citation.endPage | 60 | - |
| dc.citation.startPage | 59 | - |
| dc.citation.title | 22nd Silicon Nanoelectronics Workshop, SNW 2017 | - |
| dc.contributor.author | Park, Jong Yul | - |
| dc.contributor.author | Kim, Sung-Ho | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-19T18:41:42Z | - |
| dc.date.available | 2023-12-19T18:41:42Z | - |
| dc.date.created | 2019-03-21 | - |
| dc.date.issued | 2017-06-04 | - |
| dc.description.abstract | In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. If the channel mobility of strained Si R-PWT is 400 cm 2 ·V -1 ·s 1 , R-PWT can be operated as THz detector when channel length l= 21-28 nm. © 2017 JSAP. | - |
| dc.identifier.bibliographicCitation | 22nd Silicon Nanoelectronics Workshop, SNW 2017, pp.59 - 60 | - |
| dc.identifier.doi | 10.23919/SNW.2017.8242296 | - |
| dc.identifier.scopusid | 2-s2.0-85051032557 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35118 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8242296 | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Possibility of Si resonant plasma-wave transistor as THz detector | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2017-06-04 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.