File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김경록

Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Possibility of Si resonant plasma-wave transistor as THz detector

Author(s)
Park, Jong YulKim, Sung-HoKim, Kyung Rok
Issued Date
2017-06-04
DOI
10.23919/SNW.2017.8242296
URI
https://scholarworks.unist.ac.kr/handle/201301/35118
Fulltext
https://ieeexplore.ieee.org/document/8242296
Citation
22nd Silicon Nanoelectronics Workshop, SNW 2017, pp.59 - 60
Abstract
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. If the channel mobility of strained Si R-PWT is 400 cm 2 ·V -1 ·s 1 , R-PWT can be operated as THz detector when channel length l= 21-28 nm. © 2017 JSAP.
Publisher
Institute of Electrical and Electronics Engineers Inc.

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.