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Shin, Hyeon Suk
Lab for Carbon and 2D Materials
Research Interests
  • Two-dimensional materials: graphene, transition metal dichalcogenides, h-BN, and their heterostructures

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Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

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dc.contributor.author Kim, TaeYoung ko
dc.contributor.author Kirn, Hyeongkeun ko
dc.contributor.author Kwon, Soon Woo ko
dc.contributor.author Kim, Yena ko
dc.contributor.author Park, Won Kyu ko
dc.contributor.author Yoon, Dae Ho ko
dc.contributor.author Jang, A-Rang ko
dc.contributor.author Shin, Hyeon Suk ko
dc.contributor.author Suh, Kwang S. ko
dc.contributor.author Yang, Woo Seok ko
dc.date.available 2014-04-10T01:53:06Z -
dc.date.created 2013-06-20 ko
dc.date.issued 2012-02 ko
dc.identifier.citation NANO LETTERS, v.12, no.2, pp.743 - 748 ko
dc.identifier.issn 1530-6984 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3419 -
dc.description.abstract We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84856954442 ko
dc.identifier.wosid 000299967800036 ko
dc.type.rims ART ko
dc.description.scopustc 21 *
dc.date.scptcdate 2014-07-12 *
dc.identifier.doi 10.1021/nl203691d ko
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84856954442 ko
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