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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1396 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1388 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 58 | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kang, In Man | - |
dc.date.accessioned | 2023-12-22T06:11:24Z | - |
dc.date.available | 2023-12-22T06:11:24Z | - |
dc.date.created | 2013-06-18 | - |
dc.date.issued | 2011-05 | - |
dc.description.abstract | This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency f(T), gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated Y-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of f(T). | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.5, pp.1388 - 1396 | - |
dc.identifier.doi | 10.1109/TED.2011.2109724 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.scopusid | 2-s2.0-79955543452 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/3336 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79955543452 | - |
dc.identifier.wosid | 000289952800015 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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