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DC Field | Value | Language |
---|---|---|
dc.citation.number | 3 | - |
dc.citation.startPage | 033502 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.contributor.author | Yum, J. H. | - |
dc.contributor.author | Akyol, T. | - |
dc.contributor.author | Lei, M. | - |
dc.contributor.author | Ferrer, D. A. | - |
dc.contributor.author | Hudnall, Todd. W. | - |
dc.contributor.author | Downer, M. | - |
dc.contributor.author | Bielawski, C. W. | - |
dc.contributor.author | Bersuker, G. | - |
dc.contributor.author | Lee, J. C. | - |
dc.contributor.author | Banerjee, S. K. | - |
dc.date.accessioned | 2023-12-22T06:07:33Z | - |
dc.date.available | 2023-12-22T06:07:33Z | - |
dc.date.created | 2020-07-13 | - |
dc.date.issued | 2011-07 | - |
dc.description.abstract | We present results on n-channel inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic layer deposited (ALD) beryllium oxide (BeO) gate dielectric using the gate-last process. InP MOSFETs with the BeO gate stack were realized with high performance including the improved drive current, subthreshold swing, and a peak effective electron mobility. The transmission electron microscopy and x-ray photoemission spectroscopy measurements demonstrate an interface between BeO and InP substrates with high quality and efficient thermal stability. The use of ALD BeO as a gate dielectric may be a potential solution for future III-V MOS device fabrication. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.3, pp.033502 | - |
dc.identifier.doi | 10.1063/1.3614446 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-79960751564 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/33185 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3614446 | - |
dc.identifier.wosid | 000293679000066 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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