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DC Field | Value | Language |
---|---|---|
dc.citation.number | 25 | - |
dc.citation.startPage | 253514 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.contributor.author | Yum, J. H. | - |
dc.contributor.author | Shin, H. S. | - |
dc.contributor.author | Hill, R. | - |
dc.contributor.author | Oh, J. | - |
dc.contributor.author | Lee, H. D. | - |
dc.contributor.author | Mushinski, Ryan M. | - |
dc.contributor.author | Hudnall, Todd W. | - |
dc.contributor.author | Bielawski, C. W. | - |
dc.contributor.author | Banerjee, S. K. | - |
dc.contributor.author | Loh, W. Y. | - |
dc.contributor.author | Wang, Wei-E | - |
dc.contributor.author | Kirsch, Paul | - |
dc.date.accessioned | 2023-12-22T04:36:25Z | - |
dc.date.available | 2023-12-22T04:36:25Z | - |
dc.date.created | 2020-07-10 | - |
dc.date.issued | 2012-12 | - |
dc.description.abstract | Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 Omega/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 x 10(19) /cm(3) (=1.34 x 10(13) /cm(2)), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.25, pp.253514 | - |
dc.identifier.doi | 10.1063/1.4772641 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84871746928 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/33114 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4772641 | - |
dc.identifier.wosid | 000312780000106 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | A study of capping layers for sulfur monolayer doping on III-V junctions | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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