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GrzybowskiBartosz Andrzej

Grzybowski, Bartosz A.
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Storage of Electrical Information in Metal-Organic-Framework Memristors**

Author(s)
Yoon, Seok MinWarren, Scott C.Grzybowski, Bartosz A.
Issued Date
2014-04
DOI
10.1002/anie.201309642
URI
https://scholarworks.unist.ac.kr/handle/201301/33094
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/anie.201309642
Citation
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.53, no.17, pp.4437 - 4441
Abstract
Single crystals of a cyclodextrin-based metal-organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non-volatile RRAM memory elements that can be repeatedly read, erased, and re-written. These properties derive from ionic current within the MOF and the deposition of nanometer-thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub-nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1433-7851
Keyword (Author)
memristorsmetal-organic frameworksnegative differential resistancenon-volatile memoryresistive random access memory
Keyword
NEGATIVE DIFFERENTIAL RESISTANCEELECTRODESARCHITECTURESMECHANISMCATALYSISIONS

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