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DC Field | Value | Language |
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dc.citation.endPage | 143 | - |
dc.citation.startPage | 135 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 74 | - |
dc.contributor.author | Kim, Dae-Kyu | - |
dc.contributor.author | Lee, Myeongjae | - |
dc.contributor.author | Kim, BongSoo | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2023-12-21T18:36:43Z | - |
dc.date.available | 2023-12-21T18:36:43Z | - |
dc.date.created | 2019-07-29 | - |
dc.date.issued | 2019-11 | - |
dc.description.abstract | We report on high-performance polymeric field-effect transistors (PFETs) operating at low voltages (Vop) using a self-assembled monolayer (SAM)-passivated HfOx dielectric layer. A diketopyrrolopyrrole and quaterthiophene-based copolymer (PDPP2DT-T2) was spin-coated in air as an active channel material on top of a HfOx gate dielectric that was passivated with n-octyltrichlorosilane (OTS), n-octadecyltrichlorosilane (ODTS), and n-dodecylphosphonic acid (PAC12) SAMs. The high capacitance and low leakage current of the SAM-passivated HfOx dielectrics enabled the devices to operate at |Vop| of less than 4 V. In particular, the PFETs using ODTS-passivated HfOx demonstrated a high hole mobility (μeff h) of 1.98 cm2 V−1 s−1, a current on/off ratio of 1.4 × 104, and a threshold voltage of −0.8 V despite the fact that the device fabrication and all measurements were conducted under ambient conditions without encapsulation. Moreover, the μeff h value observed in this study is the best for high-k-dielectric-based low-voltage PFETs reported to date. This work demonstrates that our facile modification of high-k dielectrics with SAMs is a highly effective method for realizing high-performance semiconducting copolymer-based transistors working at a low Vop regime with low power consumption. | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.74, pp.135 - 143 | - |
dc.identifier.doi | 10.1016/j.orgel.2019.06.036 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.scopusid | 2-s2.0-85068409148 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/33039 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1566119919303313?via%3Dihub | - |
dc.identifier.wosid | 000485015600020 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Low-voltage, high-performance polymeric field-effect transistors based on self-assembled monolayer-passivated HfOx dielectrics: Correlation between trap density, carrier mobility, and operation voltage | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Carrier mobility | - |
dc.subject.keywordAuthor | Conjugated polymers | - |
dc.subject.keywordAuthor | Crystallinity | - |
dc.subject.keywordAuthor | Organic electronics | - |
dc.subject.keywordAuthor | Polymer field effect transistors | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | HYBRID DIELECTRICS | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordPlus | DIKETOPYRROLOPYRROLE | - |
dc.subject.keywordPlus | COPOLYMER | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | ELECTRODE | - |
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