BROWSE

Related Researcher

Author's Photo

Shin, Tae Joo
UNIST Synchrotron Radiation Research Laboratory
Research Interests
  • Synchrotron Radiation Application Researches

ITEM VIEW & DOWNLOAD

Ultralow-dielectric-constant amorphous boron nitride

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Ultralow-dielectric-constant amorphous boron nitride
Author
Hong, SeokmoLee, Chang-SeokLee, Min-HyunLee, YeongdongMa, Kyung YeolKim, GwangwooYoon, Seong InIhm, KyuwookKim, Ki-JeongShin, Tae JooKim, Sang WonJeon, Eun-chaeJeon, HansolKim, Ju-YoungLee, Hyung-IkLee, ZonghoonAntidormi, AleandroRoche, StephanChhowalla, ManishShin, Hyeon-JinShin, Hyeon Suk
Issue Date
2020-06
Publisher
Nature Publishing Group
Citation
NATURE, v.582, no.7813, pp.511 - 514
Abstract
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics1–3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal– oxide–semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends 4 the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties5. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics.
URI
https://scholarworks.unist.ac.kr/handle/201301/33005
URL
https://www.nature.com/articles/s41586-020-2375-9
DOI
10.1038/s41586-020-2375-9
ISSN
0028-0836
Appears in Collections:
PHY_Journal Papers
UCRF_Journal Papers
MSE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU