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최은미

Choi, EunMi
THz Vacuum Electronics and Applied Electromagnetics Lab.
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dc.citation.conferencePlace JA -
dc.citation.conferencePlace Kyoto -
dc.citation.endPage T147 -
dc.citation.startPage T146 -
dc.citation.title IEEE Symposium on VLSI Technology -
dc.contributor.author Ryu, MW -
dc.contributor.author Patel, Ramesh -
dc.contributor.author Ahn, SH -
dc.contributor.author Jeon, HJ -
dc.contributor.author Choe, MS -
dc.contributor.author Choi, EunMi -
dc.contributor.author Han, Ki Jin -
dc.contributor.author Kim, Kyung Rok -
dc.date.accessioned 2023-12-19T18:41:24Z -
dc.date.available 2023-12-19T18:41:24Z -
dc.date.created 2017-07-06 -
dc.date.issued 2017-06-07 -
dc.description.abstract We report a circular-shape monolithic transistor-antenna (trantenna) for high-performance plasmonic terahertz (THz) detector. By designing an asymmetric transistor on a ring-type metal-gate structure, more enhanced (45 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular patch antenna, which is designed for a 0.12-THz resonance frequency, we demonstrated the highly-enhanced responsivity (Rv) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz0.5 (x 1/10). -
dc.identifier.bibliographicCitation IEEE Symposium on VLSI Technology, pp.T146 - T147 -
dc.identifier.doi 10.23919/VLSIT.2017.7998157 -
dc.identifier.issn 0743-1562 -
dc.identifier.scopusid 2-s2.0-85028069984 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/32759 -
dc.identifier.url https://ieeexplore.ieee.org/document/7998157 -
dc.language 영어 -
dc.publisher 37th Symposium on VLSI Technology, VLSI Technology 2017 -
dc.title Trantenna: Monolithic Transistor-Antenna Device for Real-Time THz Imaging System -
dc.type Conference Paper -
dc.date.conferenceDate 2017-06-05 -

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