A 1920x1080 3.65μm-Pixel 2D/3D Image Sensor with Split and Binning Pixel Structure in 0.11μm Standard CMOS

Abstract

In this paper, we present a 2nd-generation 2D/3D imager based on the pinned- photodiode pixel structure. The time-division readout architecture for both image types (color and depth) is maintained. A complete redesign of the imager makes pixels smaller and more sensitive than before. To obtain reliable depth information using a pinned-photodiode, a depth pixel is split into eight small pieces for high-speed charge transfer, and demodulated electrons are merged into one large storage node, enabling phase delay measurement with 52.8% demodulation contrast at 20MHz frequency. Furthermore, each split pixel gener- ates its own color information, offering a 2D image with full-HD resolution (1920x1080).