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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

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dc.contributor.author Kim, Kwan-Ho ko
dc.contributor.author Park, Hyung-Youl ko
dc.contributor.author Shim, Jaewoo ko
dc.contributor.author Shin, Gicheol ko
dc.contributor.author Andreev, Maksim ko
dc.contributor.author Koo, Jiwan ko
dc.contributor.author Yoo, Gwangwe ko
dc.contributor.author Jung, Kilsu ko
dc.contributor.author Heo, Keun ko
dc.contributor.author Lee, Yoonmyung ko
dc.contributor.author Yu, Hyun-Yong ko
dc.contributor.author Kim, Kyung Rok ko
dc.contributor.author Cho, Jeong Ho ko
dc.contributor.author Lee, Sungjoo ko
dc.contributor.author Park, Jin-Hong ko
dc.date.available 2020-05-21T09:08:43Z -
dc.date.created 2020-05-13 ko
dc.date.issued 2020-04 ko
dc.identifier.citation NANOSCALE HORIZONS, v.5, no.4, pp.654 - 662 ko
dc.identifier.issn 2055-6756 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/32157 -
dc.description.abstract For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (V-TH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three V-TH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show them-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified. ko
dc.language 영어 ko
dc.publisher ROYAL SOC CHEMISTRY ko
dc.title A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85082775824 ko
dc.identifier.wosid 000527781900012 ko
dc.type.rims ART ko
dc.identifier.doi 10.1039/c9nh00631a ko
dc.identifier.url https://pubs.rsc.org/en/content/articlelanding/2020/NH/C9NH00631A#!divAbstract ko
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