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Yoo, Jung-Woo
Nano Spin Transport Lab.
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dc.citation.endPage 215 -
dc.citation.startPage 207 -
dc.citation.title NATURE ELECTRONICS -
dc.citation.volume 3 - Song, Seunguk - Sim, Yeoseon - Kim, Se-Yang - Hwa, Jung - Oh, Inseon - Na, Woongki - Lee, Do Hee - Wang, Jaewon - Yan, Shili - Liu, Yinan - Kwak, Jinsung - Chen, Jian-Hao - Cheong, Hyeonsik - Yoo, Jung-Woo - Lee, Zonghoon - Kwon, Soon-Yong - 2023-12-21T17:42:41Z - 2023-12-21T17:42:41Z - 2020-04-23 - 2020-04 -
dc.description.abstract A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal-semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal-semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky-Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal-semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning. -
dc.identifier.bibliographicCitation NATURE ELECTRONICS, v.3, pp.207 - 215 -
dc.identifier.doi 10.1038/s41928-020-0396-x -
dc.identifier.issn 2520-1131 -
dc.identifier.scopusid 2-s2.0-85083190519 -
dc.identifier.uri -
dc.identifier.url -
dc.identifier.wosid 000523951600002 -
dc.language 영어 -
dc.title Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MOS2 TRANSISTORS -
dc.subject.keywordPlus LARGE-AREA -
dc.subject.keywordPlus RESISTANCE -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus PERFORMANCE -
dc.subject.keywordPlus ELECTRODE -
dc.subject.keywordPlus DEVICES -
dc.subject.keywordPlus FILMS -
dc.subject.keywordPlus WSE2 -


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