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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit

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dc.contributor.author Song, Seunguk ko
dc.contributor.author Sim, Yeoseon ko
dc.contributor.author Kim, Se-Yang ko
dc.contributor.author Hwa, Jung ko
dc.contributor.author Oh, Inseon ko
dc.contributor.author Na, Woongki ko
dc.contributor.author Lee, Do Hee ko
dc.contributor.author Wang, Jaewon ko
dc.contributor.author Yan, Shili ko
dc.contributor.author Liu, Yinan ko
dc.contributor.author Kwak, Jinsung ko
dc.contributor.author Chen, Jian-Hao ko
dc.contributor.author Cheong, Hyeonsik ko
dc.contributor.author Yoo, Jung-Woo ko
dc.contributor.author Lee, Zonghoon ko
dc.contributor.author Kwon, Soon-Yong ko
dc.date.available 2020-04-29T00:27:14Z -
dc.date.created 2020-04-23 ko
dc.date.issued 2020-04 ko
dc.identifier.citation NATURE ELECTRONICS, v.3, pp.207 - 215 ko
dc.identifier.issn 2520-1131 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/32015 -
dc.description.abstract A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal-semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal-semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky-Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal-semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning. ko
dc.language 영어 ko
dc.publisher NATURE PUBLISHING GROUP ko
dc.title Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85083190519 ko
dc.identifier.wosid 000523951600002 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41928-020-0396-x ko
dc.identifier.url https://www.nature.com/articles/s41928-020-0396-x ko
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