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신현석

Shin, Hyeon Suk
Lab for Carbon and 2D Materials
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dc.citation.endPage 5292 -
dc.citation.number 9 -
dc.citation.startPage 5286 -
dc.citation.title NANOSCALE -
dc.citation.volume 12 -
dc.contributor.author Kim, Gwangwoo -
dc.contributor.author Shin, Hyeon Suk -
dc.date.accessioned 2023-12-21T17:48:31Z -
dc.date.available 2023-12-21T17:48:31Z -
dc.date.created 2020-04-03 -
dc.date.issued 2020-03 -
dc.description.abstract Edge contacts between two-dimensional (2D) materials in the in-plane direction can achieve minimal contact area and low contact resistance, producing atomically thin devices with improved performance. Particularly, lateral heterojunctions of metallic graphene and semiconducting transition metal dichalcogenides (TMDs) exhibit small Schottky barrier heights due to graphene's low work-function. However, issues exist with the fabrication of highly transparent and flexible multi-functional devices utilizing lateral heterostructures (HSs) of graphene and TMDs via spatially controlled growth. This review demonstrates the growth and electronic applications of lateral HSs of graphene and TMDs, highlighting key technologies controlling the wafer-scale growth of continuous films for practical applications. It deepens the understanding of the spatially controlled growth of lateral HSs using chemical vapor deposition methods, and also contributes to the applications that depend on the scale-up of all-2D electronics with ultra-high electrical performance. -
dc.identifier.bibliographicCitation NANOSCALE, v.12, no.9, pp.5286 - 5292 -
dc.identifier.doi 10.1039/c9nr10859a -
dc.identifier.issn 2040-3364 -
dc.identifier.scopusid 2-s2.0-85081087411 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/31893 -
dc.identifier.url https://pubs.rsc.org/en/content/articlelanding/2020/NR/C9NR10859A#!divAbstract -
dc.identifier.wosid 000519254300002 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Review -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus HEXAGONAL BORON-NITRIDE -
dc.subject.keywordPlus INPLANE HETEROSTRUCTURES -
dc.subject.keywordPlus EPITAXIAL-GROWTH -
dc.subject.keywordPlus CONTACTS -
dc.subject.keywordPlus WSE2 -
dc.subject.keywordPlus TRANSPORT -
dc.subject.keywordPlus FILMS -
dc.subject.keywordPlus MOS2 -
dc.subject.keywordPlus TRANSISTORS -
dc.subject.keywordPlus JUNCTION -

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