Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 49476 | - |
dc.citation.startPage | 49467 | - |
dc.citation.title | IEEE ACCESS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Seong, Jewoo | - |
dc.contributor.author | Jang, Jinwoong | - |
dc.contributor.author | Lee, Jaehoon | - |
dc.contributor.author | Lee, Myunghee | - |
dc.date.accessioned | 2023-12-21T17:50:10Z | - |
dc.date.available | 2023-12-21T17:50:10Z | - |
dc.date.created | 2020-03-09 | - |
dc.date.issued | 2020-03 | - |
dc.description.abstract | Micro-displays based on micro-LEDs are becoming more and more attractive in AR/MR (Augmented/Mixed Reality) applications. A display size of 0.5 to 0.7-inch is preferred, with 5,000 PPI (Pixel Per Inch) or higher. Due to this pixel density and size, a CMOS (Complementary Metal-Oxide-Silicon) backplane is an ideal solution to drive these pixelized micro-LEDs. As the required pixel size gets smaller, the design of the appropriate pixel circuit becomes more challenging. The simplest 2T1C (2 transistors & 1 capacitor) pixel circuit has potential problems, due to the leakage current of the switch transistor and the voltage drop on the matrix array layout. In this paper, a pixel circuit is proposed as a solution to overcome these two issues. Our simulation results show that the variation of the driving current to the LED is improved by 95 %, and the IR drop error rate is around 2.2 % compared to the 2T1C circuit. The test results also show that the error rate of IPIXEL for the whole region of display is under 2.5 %. This work is verified using a test chip implementation with 180 nm CMOS process technology. | - |
dc.identifier.bibliographicCitation | IEEE ACCESS, v.8, pp.49467 - 49476 | - |
dc.identifier.doi | 10.1109/ACCESS.2020.2979883 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.scopusid | 2-s2.0-85082293140 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31545 | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9031408 | - |
dc.identifier.wosid | 000524756100001 | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | CMOS Backplane Pixel Circuit with Leakage and Voltage Compensation for an Micro-LED Display achieving 5,000 PPI or higher | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic;Telecommunications;Computer Science, Information Systems | - |
dc.relation.journalResearchArea | Computer Science; Engineering; Telecommunications | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Light emitting diodes | - |
dc.subject.keywordAuthor | Switching circuits | - |
dc.subject.keywordAuthor | Gray-scale | - |
dc.subject.keywordAuthor | Backplanes | - |
dc.subject.keywordAuthor | Leakage currents | - |
dc.subject.keywordAuthor | Indexes | - |
dc.subject.keywordAuthor | Micro-LED display | - |
dc.subject.keywordAuthor | microdisplay | - |
dc.subject.keywordAuthor | high-resolution | - |
dc.subject.keywordAuthor | DRAM type | - |
dc.subject.keywordAuthor | voltage driving | - |
dc.subject.keywordAuthor | low leakage switch | - |
dc.subject.keywordAuthor | IR drop compensation | - |
dc.subject.keywordAuthor | CMOS backplane | - |
dc.subject.keywordAuthor | and high-PPI | - |
dc.subject.keywordAuthor | Transistors | - |
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