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Ding, Feng
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dc.citation.number 24 -
dc.citation.startPage 245409 -
dc.citation.title PHYSICAL REVIEW B -
dc.citation.volume 72 -
dc.contributor.author Ding, F -
dc.date.accessioned 2023-12-22T10:10:06Z -
dc.date.available 2023-12-22T10:10:06Z -
dc.date.created 2020-03-04 -
dc.date.issued 2005-12 -
dc.description.abstract Point defects, including atom vacancies, adatom, and Stone-Wale defects, close to a (5,5) single-walled carbon nanotube (SWNT) open end were studied by density functional theory (DFT), semiempirical PM3 methods, and the empirical Brenner potential. It is found that defect stability increases as they become closer to the SWNT open end. Based on these results, a model for removing defects in a growing SWNT is proposed, where the defects diffuse to the SWNT end. Furthermore, the calculations show that the semiempirical PM3 method compares well with DFT results, and is accurate enough for studying defect formation in SWNTs. In contrast, the empirical Brenner potential yields large errors and is sometimes not even qualitatively correct. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW B, v.72, no.24, pp.245409 -
dc.identifier.doi 10.1103/PhysRevB.72.245409 -
dc.identifier.issn 2469-9950 -
dc.identifier.scopusid 2-s2.0-29644442430 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/31427 -
dc.identifier.url https://journals.aps.org/prb/abstract/10.1103/PhysRevB.72.245409 -
dc.identifier.wosid 000234342900092 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title Theoretical study of the stability of defects in single-walled carbon nanotubes as a function of their distance from the nanotube end -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus SEMIEMPIRICAL METHODS -
dc.subject.keywordPlus MOLECULAR-DYNAMICS -
dc.subject.keywordPlus CATALYZED GROWTH -
dc.subject.keywordPlus OPTIMIZATION -
dc.subject.keywordPlus NANOCAPSULES -
dc.subject.keywordPlus TEMPERATURE -
dc.subject.keywordPlus COALESCENCE -
dc.subject.keywordPlus PARAMETERS -
dc.subject.keywordPlus PARTICLES -

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