Theoretical and Experimental Investigations on the Growth of SnS van der Waals Epitaxies on Graphene Buffer Layer

Abstract

We present theoretical and experimental investigations on the growth of SnS van der Waals epitaxies (vdWEs) on graphene buffer layer (GBL). Local density approximation (LDA) was used to evaluate the bond length disorder, binding energies, and growth orientations for SnS deposited on crystalline semiconductor substrates with and without the GBL. Strong bond length disorder is observed for SnS deposited directly on GaAs substrates, whereas in the case where a GBL is used the disorder is substantially reduced. First-principle calculations indicate two favored growth orientations for SnS deposited on GBL resulting in 12 distinct peaks in the azimuthal hard X-ray diffraction (HXRD) scan due to the structural symmetry of the GBL. The results stipulate formation of strong chemical bonds at the GaAs/SnS interface while the interaction between SnS and the underlying GBL is dominated by vdW force. Nevertheless this vdW force is shown to be strong enough to induce favored nucleation orientations for the SnS and is essential for the observed improvement in the crystallinity of the films.