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DC Field | Value | Language |
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dc.citation.endPage | 3567 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3561 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Zhao, Ruiqi | - |
dc.contributor.author | Zhao, Xiaolei | - |
dc.contributor.author | Liu, Zhirong | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Liu, Zhongfan | - |
dc.date.accessioned | 2023-12-21T22:37:07Z | - |
dc.date.available | 2023-12-21T22:37:07Z | - |
dc.date.created | 2020-03-01 | - |
dc.date.issued | 2017-03 | - |
dc.description.abstract | Hexagonal boron nitride (h-BN) is crucial for many applications, and its synthesis over a large area with high quality is strongly desired. A promising approach to synthesize h-BN is chemical vapor deposition on transition metal catalysts, in which the alignments of BN clusters in the initial growth determine both the types and the amounts of defects in h-BN. In the search for a better catalyst, we systematically studied the interactions between h-BN clusters and various metal surfaces. Our results show that the clusters on nearly all catalyst surfaces, no matter whether the (111) facets of face-centered cubic (FCC) metals or the (0001) facets of hexagonal close packed (HCP) metals, have two local minima with opposite orientations. During the initial growth, h-BN clusters adopt the energy-favored sites, whose registry is well preserved upon further growth owing to the strong interaction between the edge atoms of h-BN and the underlying substrates. On FCC(111), the h-BN domains are always aligned in parallel orientations, while on HCP(0001) they are parallel on the same terrace and anti-parallel on neighboring terraces. Beyond this, on the (111) surfaces of Ir and Rh, the BhNt configuration is much more energy favorable than BfNt, where, the subscripts h, t, and f represent the adsorption sites, hcp, top and fcc, respectively. Thus, Ir(111) and Rh(111) might promote the growth of h-BN domains with the same alignments, which will greatly improve the quality of h-BN by reducing the possibility of formation of grain boundaries. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.9, no.10, pp.3561 - 3567 | - |
dc.identifier.doi | 10.1039/c6nr09368j | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-85014891667 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31301 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2017/NR/C6NR09368J#!divAbstract | - |
dc.identifier.wosid | 000397125500026 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Controlling the orientations of h-BN during growth on transition metals by chemical vapor deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | EDGES | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | DOMAINS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | CORRUGATED MONOLAYER | - |
dc.subject.keywordPlus | EMBEDDED GRAPHENE | - |
dc.subject.keywordPlus | CRYSTALLINE | - |
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