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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 273 | - |
dc.citation.startPage | 268 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 425 | - |
dc.contributor.author | Alaskar, Yazeed | - |
dc.contributor.author | Arafin, Shamsul | - |
dc.contributor.author | Lin, Qiyin | - |
dc.contributor.author | Wickramaratne, Darshana | - |
dc.contributor.author | McKay, Jeff | - |
dc.contributor.author | Norman, Andrew G. | - |
dc.contributor.author | Zhang, Zhi | - |
dc.contributor.author | Yao, Luchi | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Zou, Jin | - |
dc.contributor.author | Goorsky, Mark S. | - |
dc.contributor.author | Lake, Roger K. | - |
dc.contributor.author | Zurbuchen, Mark A. | - |
dc.contributor.author | Wang, Kang L. | - |
dc.date.accessioned | 2023-12-22T00:41:57Z | - |
dc.date.available | 2023-12-22T00:41:57Z | - |
dc.date.created | 2020-03-01 | - |
dc.date.issued | 2015-09 | - |
dc.description.abstract | A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (theta-2 theta scan, omega-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smooth GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application. | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.425, pp.268 - 273 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2015.02.003 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.scopusid | 2-s2.0-84979962807 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31255 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024815000822?via%3Dihub | - |
dc.identifier.wosid | 000356669200062 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Crystallography; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Crystallography; Materials Science; Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Semiconducting gallium arsenide | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
dc.subject.keywordAuthor | Semiconducting silicon | - |
dc.subject.keywordPlus | DER-WAALS EPITAXY | - |
dc.subject.keywordPlus | NANOWIRE GROWTH | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
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