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DC Field | Value | Language |
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dc.citation.endPage | 3176 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3164 | - |
dc.citation.title | NANO RESEARCH | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Song, Xiuju | - |
dc.contributor.author | Gao, Junfeng | - |
dc.contributor.author | Nie, Yufeng | - |
dc.contributor.author | Gao, Teng | - |
dc.contributor.author | Sun, Jingyu | - |
dc.contributor.author | Ma, Donglin | - |
dc.contributor.author | Li, Qiucheng | - |
dc.contributor.author | Chen, Yubin | - |
dc.contributor.author | Jin, Chuanhong | - |
dc.contributor.author | Bachmatiuk, Alicja | - |
dc.contributor.author | Ruemmeli, Mark H. | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Zhang, Yanfeng | - |
dc.contributor.author | Liu, Zhongfan | - |
dc.date.accessioned | 2023-12-22T00:38:33Z | - |
dc.date.available | 2023-12-22T00:38:33Z | - |
dc.date.created | 2020-03-01 | - |
dc.date.issued | 2015-10 | - |
dc.description.abstract | Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to similar to 72 A mu m in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD. | - |
dc.identifier.bibliographicCitation | NANO RESEARCH, v.8, no.10, pp.3164 - 3176 | - |
dc.identifier.doi | 10.1007/s12274-015-0816-9 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.scopusid | 2-s2.0-84943361339 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31254 | - |
dc.identifier.url | https://link.springer.com/article/10.1007%2Fs12274-015-0816-9 | - |
dc.identifier.wosid | 000362588100005 | - |
dc.language | 영어 | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.title | Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | Cu foil | - |
dc.subject.keywordAuthor | domain size | - |
dc.subject.keywordAuthor | orientation | - |
dc.subject.keywordAuthor | chemical vapor deposition (CVD) | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL | - |
dc.subject.keywordPlus | GRAPHENE ELECTRONICS | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FOIL | - |
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