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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 518 | - |
dc.citation.startPage | 513 | - |
dc.citation.title | CARBON | - |
dc.citation.volume | 158 | - |
dc.contributor.author | Kim, Dong-Ok | - |
dc.contributor.author | Hong, Hyo-Ki | - |
dc.contributor.author | Seo, Dong-Bum | - |
dc.contributor.author | Trung, Tran Nam | - |
dc.contributor.author | Hwang, Chan-Cuk | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Kim, Eui-Tae | - |
dc.date.accessioned | 2023-12-21T17:50:37Z | - |
dc.date.available | 2023-12-21T17:50:37Z | - |
dc.date.created | 2020-02-20 | - |
dc.date.issued | 2020-03 | - |
dc.description.abstract | New high-k gate dielectrics are highly necessary in facilitating the continuous down-scaling of metal–oxide–semiconductor devices to the sub-10 nm range. This study presents ultrathin organic hydrocarbon (HC) films as a novel high-k gate insulator for metal–insulator–semiconductor (MIS) devices. During inductively-coupled plasma chemical vapor deposition with CH4 and H2 gases, the growth temperature greatly affects the structure of the carbon layers and consequently their dielectric characteristics. Specifically, sp2-rich dielectric HC layers are formed below 600 °C, whereas highly-ordered sp2-hybridized graphene is formed at 950 °C. The k value of the resulting HC films increases up to a maximum value of 90 at 350 °C. Moreover, the MIS devices exhibit excellent gate-insulating properties, including almost no hysteresis in the capacitance–voltage curve, low leakage current, and high dielectric strength, which surpass those of existing high-k gate oxides. These results reveal that the organic HC films are a promising next-generation high-k gate dielectric material for sub-10 nm node Si and organic semiconductor technologies. | - |
dc.identifier.bibliographicCitation | CARBON, v.158, pp.513 - 518 | - |
dc.identifier.doi | 10.1016/j.carbon.2019.11.019 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.scopusid | 2-s2.0-85075401183 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31232 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0008622319311431?via%3Dihub | - |
dc.identifier.wosid | 000512995800053 | - |
dc.language | 영어 | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gate dielectrics | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Hydrocarbons | - |
dc.subject.keywordAuthor | Metal oxide semiconductors | - |
dc.subject.keywordPlus | CARBON-FILMS | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
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