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신태주

Shin, Tae Joo
Synchrotron Radiation Research Lab.
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dc.citation.endPage 9051 -
dc.citation.number 41 -
dc.citation.startPage 9047 -
dc.citation.title JOURNAL OF MATERIALS CHEMISTRY -
dc.citation.volume 20 -
dc.contributor.author Mukherjee, Biswanath -
dc.contributor.author Shin, Tae Joo -
dc.contributor.author Sim, Kyoseung -
dc.contributor.author Mukherjee, Moumita -
dc.contributor.author Lee, Junghyun -
dc.contributor.author Kim, Sung Hoon -
dc.contributor.author Pyo, Seungmoon -
dc.date.accessioned 2023-12-22T06:38:10Z -
dc.date.available 2023-12-22T06:38:10Z -
dc.date.created 2020-01-23 -
dc.date.issued 2010-20 -
dc.description.abstract Periodic arrays of highly oriented 7,7,8,8-tetracyanoquinodimethane (TCNQ) crystals, directly grown on a polymeric gate dielectric through a solution process, are used for the fabrication of a low-voltage organic field-effect transistor (OFET). Consequently, an organic complementary inverter using the TCNQ periodic array (n-channel) and pentacene (p-channel) is also reported. The TCNQ-based n-channel OFET exhibited very stable field-effect characteristics with low operational (2 V) and threshold voltages (<0.5 V). The highest field-effect carrier mobility in the saturation region was found to be 0.03 cm(2) V(-1) s(-1). Furthermore, the organic complementary inverter showed good response characteristics in the low-voltage regime. The swing range of V(OUT) is same as V(DD), ensuring "zero'' static power consumption in the digital logic circuit. For the inverter with V(DD) 2 V, the noise margin for low and high voltages are 1.0 V and 0.3 V, respectively. The logic threshold (V(IN) V(OUT)) is 1.3 V and the maximum gain (-dV(OUT)/dV(IN)) of 4 is obtained at V(IN) 1.3 V. -
dc.identifier.bibliographicCitation JOURNAL OF MATERIALS CHEMISTRY, v.20, no.41, pp.9047 - 9051 -
dc.identifier.doi 10.1039/c0jm01220c -
dc.identifier.issn 0959-9428 -
dc.identifier.scopusid 2-s2.0-77957926262 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/30887 -
dc.identifier.url https://pubs.rsc.org/en/content/articlelanding/2010/JM/c0jm01220c#!divAbstract -
dc.identifier.wosid 000282871600011 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Periodic arrays of organic crystals on polymer gate dielectric for low-voltage field-effect transistors and complementary inverter -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus PLASTIC SUBSTRATE -
dc.subject.keywordPlus N-TYPE -
dc.subject.keywordPlus ELECTRONICS -
dc.subject.keywordPlus CIRCUITS -
dc.subject.keywordPlus DISPLAYS -
dc.subject.keywordPlus LAYER -

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