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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 9051 | - |
dc.citation.number | 41 | - |
dc.citation.startPage | 9047 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 20 | - |
dc.contributor.author | Mukherjee, Biswanath | - |
dc.contributor.author | Shin, Tae Joo | - |
dc.contributor.author | Sim, Kyoseung | - |
dc.contributor.author | Mukherjee, Moumita | - |
dc.contributor.author | Lee, Junghyun | - |
dc.contributor.author | Kim, Sung Hoon | - |
dc.contributor.author | Pyo, Seungmoon | - |
dc.date.accessioned | 2023-12-22T06:38:10Z | - |
dc.date.available | 2023-12-22T06:38:10Z | - |
dc.date.created | 2020-01-23 | - |
dc.date.issued | 2010-20 | - |
dc.description.abstract | Periodic arrays of highly oriented 7,7,8,8-tetracyanoquinodimethane (TCNQ) crystals, directly grown on a polymeric gate dielectric through a solution process, are used for the fabrication of a low-voltage organic field-effect transistor (OFET). Consequently, an organic complementary inverter using the TCNQ periodic array (n-channel) and pentacene (p-channel) is also reported. The TCNQ-based n-channel OFET exhibited very stable field-effect characteristics with low operational (2 V) and threshold voltages (<0.5 V). The highest field-effect carrier mobility in the saturation region was found to be 0.03 cm(2) V(-1) s(-1). Furthermore, the organic complementary inverter showed good response characteristics in the low-voltage regime. The swing range of V(OUT) is same as V(DD), ensuring "zero'' static power consumption in the digital logic circuit. For the inverter with V(DD) 2 V, the noise margin for low and high voltages are 1.0 V and 0.3 V, respectively. The logic threshold (V(IN) V(OUT)) is 1.3 V and the maximum gain (-dV(OUT)/dV(IN)) of 4 is obtained at V(IN) 1.3 V. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.41, pp.9047 - 9051 | - |
dc.identifier.doi | 10.1039/c0jm01220c | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.scopusid | 2-s2.0-77957926262 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30887 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2010/JM/c0jm01220c#!divAbstract | - |
dc.identifier.wosid | 000282871600011 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Periodic arrays of organic crystals on polymer gate dielectric for low-voltage field-effect transistors and complementary inverter | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PLASTIC SUBSTRATE | - |
dc.subject.keywordPlus | N-TYPE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | LAYER | - |
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