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Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals

Author(s)
Lee, YangjinKoo, JahyunLee, SolYoon, Jun-YeongKim, KangwonJang, MyeongjinJang, JeongsuChoe, JeongheonLi, Bao-WenLe, Chinh TamUllah, FarmanKim, Yong SooHwang, Jun YeonLee, Won ChulRuoff, Rodney S.Cheong, HyeonsikCheon, JinwooLee, HoonkyungKim, Kwanpyo
Issued Date
2020-02
DOI
10.1002/advs.201900757
URI
https://scholarworks.unist.ac.kr/handle/201301/30838
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201900757
Citation
ADVANCED SCIENCE, v.7, no.4, pp.1900757
Abstract
The atomic or molecular assembly on 2D materials through the relatively weak van der Waals interaction is quite different from the conventional heteroepitaxy and may result in unique growth behaviors. Here, it is shown that straight 1D cyanide chains display universal epitaxy on hexagonal 2D materials. A universal oriented assembly of cyanide crystals (AgCN, AuCN, and Cu0.5Au0.5CN) is observed, where the chains are aligned along the three zigzag lattice directions of various 2D hexagonal crystals (graphene, h-BN, WS2, MoS2, WSe2, MoSe2, and MoTe2). The potential energy landscape of the hexagonal lattice induces this preferred alignment of 1D chains along the zigzag lattice directions, regardless of the lattice parameter and surface elements as demonstrated by first-principles calculations and parameterized surface potential calculations. Furthermore, the oriented microwires can serve as crystal orientation markers, and stacking-angle-controlled vertical 2D heterostructures are successfully fabricated by using them as markers. The oriented van der Waals epitaxy can be generalized to any hexagonal 2D crystals and will serve as a unique growth process to form crystals with orientations along the zigzag directions by epitaxy.
Publisher
Wiley-VCH Verlag
ISSN
2198-3844
Keyword (Author)
1D cyanide chains2D hexagonal crystalsoriented van der Waals epitaxyvertical heterostructures
Keyword
SINGLE-CRYSTALGRAPHENEGROWTHHETEROSTRUCTURESTRANSITIONPOINTSEDGE

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