There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 302 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 296 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Lee, Jungho | - |
dc.contributor.author | Shin, Eun-Sol | - |
dc.contributor.author | Kim, Yeon-Ju | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.contributor.author | Yang, Changduk | - |
dc.date.accessioned | 2023-12-21T18:10:17Z | - |
dc.date.available | 2023-12-21T18:10:17Z | - |
dc.date.created | 2019-12-30 | - |
dc.date.issued | 2020-01 | - |
dc.description.abstract | In spite of its interesting ‘asymmetric’ polar cyclic amide structure combining the dual properties of isoindigo (IIG) and thieno-isoindigo, the recently formulated thieno-benzo-isoindigo (TBIG) has been less explored as a building block for organic electronic materials in conjugated polymers. This article introduces the results obtained on TBIG-based polymers (PTBIG-100, PTBIG-75, PTBIG-50, and PTBIG-25) having different ratios of TBIG and IIG accepting units and a bithiophene counterpart donor to highlight their fundamental characteristics in terms of the organic field-effect transistor (OFET) mobilities. Besides, an increase in the TBIG unit results in increased co-planarity, red-shifted absorption, and higher-lying highest occupied molecular orbital levels as well as higher face-on crystallite populations relative to edge-on ones. All the polymer-based OFETs exhibit ambipolar charge transport properties; PTBIG-100 adopting a highly face-on orientation exhibits the highest hole mobility of 0.13 cm2 V−1 s−1 but rather low electron mobility, while the opposite is true for PTBIG-25 having a higher edge-on one. Besides, highly balanced hole and electron mobilities (μFET,h = 0.06 cm2 V−1 s−1 and μFET,e = 0.045 cm2 V−1 s−1) are observed for PTBIG-75 with a similar population between face-on and edge-on textures. Analysis of the electrical and structural properties in this study demonstrates that the ratio of face-on and edge-on is a key factor in not only determining the dominant polarity, but also achieving balanced ambipolarity in OFETs. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.1, pp.296 - 302 | - |
dc.identifier.doi | 10.1039/C9TC05641F | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.scopusid | 2-s2.0-85077510690 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30698 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2020/tc/c9tc05641f#!divAbstract | - |
dc.identifier.wosid | 000507309500028 | - |
dc.language | 영어 | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Controlling the ambipolarity of thieno-benzo-isoindigo polymer-based transistors: the balance of face-on and edge-on populations | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science; Physics | - |
dc.relation.journalResearchArea | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | SIDE-CHAIN | - |
dc.subject.keywordPlus | CONJUGATED POLYMER | - |
dc.subject.keywordPlus | NAPHTHALENE DIIMIDE | - |
dc.subject.keywordPlus | MOLECULAR DESIGN | - |
dc.subject.keywordPlus | HOLE MOBILITIES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | COPOLYMERS | - |
dc.subject.keywordPlus | TRANSPORT | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.