Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 1 | - |
dc.citation.startPage | 56 | - |
dc.citation.title | NPG ASIA MATERIALS | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Geng, Dechao | - |
dc.contributor.author | Dong, Jichen | - |
dc.contributor.author | Ang, Lay Kee | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Yang, Hui Ying | - |
dc.date.accessioned | 2023-12-21T18:38:00Z | - |
dc.date.available | 2023-12-21T18:38:00Z | - |
dc.date.created | 2019-12-24 | - |
dc.date.issued | 2019-10 | - |
dc.description.abstract | Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials. | - |
dc.identifier.bibliographicCitation | NPG ASIA MATERIALS, v.11, no.1, pp.56 | - |
dc.identifier.doi | 10.1038/s41427-019-0162-6 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.scopusid | 2-s2.0-85073410022 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30682 | - |
dc.identifier.url | https://www.nature.com/articles/s41427-019-0162-6 | - |
dc.identifier.wosid | 000489993400003 | - |
dc.language | 영어 | - |
dc.publisher | Nature Publishing Group | - |
dc.title | In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL GRAPHENE | - |
dc.subject.keywordPlus | INPLANE HETEROSTRUCTURES | - |
dc.subject.keywordPlus | HETEROEPITAXIAL GROWTH | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | FLAKES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | EDGES | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.