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정후영

Jeong, Hu Young
UCRF Electron Microscopy group
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dc.citation.endPage 307 -
dc.citation.number 1 -
dc.citation.startPage 301 -
dc.citation.title ACS NANO -
dc.citation.volume 7 -
dc.contributor.author Lee, Dong Hyun -
dc.contributor.author Yi, Jaeseok -
dc.contributor.author Lee, Jung Min -
dc.contributor.author Lee, Sang Jun -
dc.contributor.author Doh, Yong-Joo -
dc.contributor.author Jeong, Hu Young -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Paik, Ungyu -
dc.contributor.author Rogers, John A. -
dc.contributor.author Park, Won II -
dc.date.accessioned 2023-12-22T04:17:26Z -
dc.date.available 2023-12-22T04:17:26Z -
dc.date.created 2013-06-12 -
dc.date.issued 2013-01 -
dc.description.abstract Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of similar to 2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10K, which confirmed the opening of the substantial bandgap (similar to 2.5-3.2 meV) in graphene by coupling with Si Islands. -
dc.identifier.bibliographicCitation ACS NANO, v.7, no.1, pp.301 - 307 -
dc.identifier.doi 10.1021/nn304007x -
dc.identifier.issn 1936-0851 -
dc.identifier.scopusid 2-s2.0-84872830964 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3062 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84872830964 -
dc.identifier.wosid 000314082800034 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands -
dc.type Article -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor silicon islands -
dc.subject.keywordAuthor van der Waals growth -
dc.subject.keywordAuthor bandgap engineering -
dc.subject.keywordAuthor sublattice asymmetry -

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