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Bielawski, Christopher W.
Synthetic Materials & Macromolecules
Research Interests
  • Synthetic chemistry, materials science, polymer chemistry, catalysis, carbon-based materials

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Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

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Title
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
Author
Jang, YoonseoLee, Seung MinJung, Do HwanYum, Jung HwanLarsen, Eric S.Bielawski, Christopher W.Oh, Jungwoo
Issue Date
2020-01
Publisher
Elsevier Ltd
Citation
SOLID-STATE ELECTRONICS, v.163, pp.107661
Abstract
Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.
URI
https://scholarworks.unist.ac.kr/handle/201301/29049
URL
https://www.sciencedirect.com/science/article/pii/S0038110119304575?via%3Dihub
DOI
10.1016/j.sse.2019.107661
ISSN
0038-1101
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