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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

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Effect of sulphur vacancy on geometric and electronic structure of MoS2 induced by molecular hydrogen treatment at room temperature

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dc.contributor.author Kim, Byung Hoon ko
dc.contributor.author Park, Min ko
dc.contributor.author Lee, Minoh ko
dc.contributor.author Baek, Seung Jae ko
dc.contributor.author Jeong, Hu Young ko
dc.contributor.author Choi, Min ko
dc.contributor.author Chang, Sung Jin ko
dc.contributor.author Hong, Won G. ko
dc.contributor.author Kim, Tae Kyung ko
dc.contributor.author Moon, Hoi Ri ko
dc.contributor.author Park, Yung Woo ko
dc.contributor.author Park, Noejung ko
dc.contributor.author Jun, Yongseok ko
dc.date.available 2014-04-09T08:55:15Z -
dc.date.created 2013-10-14 ko
dc.date.issued 2013-10 ko
dc.identifier.citation RSC ADVANCES, v.3, no.40, pp.18424 - 18429 ko
dc.identifier.issn 2046-2069 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2796 -
dc.description.abstract Investigations into the interaction between molecular hydrogen and molybdenum disulphide have been in increasing demand to improve the understanding of the hydrodesulphurisation process, especially the creation of sulphur vacancies which result in coordinatively unsaturated sites in MoS 2. Here we present comprehensive studies of the structural and electronic modulation caused by exposure of MoS2 to H2 over a low temperature range, which may be helpful for industrial applications. Detail investigations were conducted with Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), and electrical transport properties as a function of H2 gas pressure up to 24 bar from 295 K to 350 K. Upon exposure to H2, we observed bond-softening using Raman spectroscopy, a decrease in d-spacing from the TEM results, and an increase in conductance, all of which are consistent with the first-principles calculations. The results demonstrate the formation of sulphur vacancies even under low H2 pressure at low temperature. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher ROYAL SOC CHEMISTRY ko
dc.title Effect of sulphur vacancy on geometric and electronic structure of MoS2 induced by molecular hydrogen treatment at room temperature ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84884860642 ko
dc.identifier.wosid 000325006600031 ko
dc.type.rims ART ko
dc.description.wostc 2 *
dc.description.scopustc 0 *
dc.date.tcdate 2015-02-28 *
dc.date.scptcdate 2014-08-18 *
dc.identifier.doi 10.1039/c3ra42072h ko
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84884860642 ko
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CHM_Journal Papers
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