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DC Field | Value | Language |
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dc.citation.endPage | 9228 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 9223 | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 4 | - |
dc.contributor.author | Chung, Dong Hyen | - |
dc.contributor.author | Guk, Hyein | - |
dc.contributor.author | Kim, Deajin | - |
dc.contributor.author | Han, Sang Soo | - |
dc.contributor.author | Park, Noejung | - |
dc.contributor.author | Choi, Kihang | - |
dc.contributor.author | Choi, Seung-Hoon | - |
dc.date.accessioned | 2023-12-22T03:08:33Z | - |
dc.date.available | 2023-12-22T03:08:33Z | - |
dc.date.created | 2014-02-24 | - |
dc.date.issued | 2014-01 | - |
dc.description.abstract | We examined the diffusion of hydrogen atoms in mono-, bi- and tetralayer graphene with AB stacking and two bilayer graphene with stacking faults using density functional theory. The bi- and tetralayer graphene provide diffusion pathways with lower energy barriers inside the interlayer space. Inside the bi- and tetralayer graphene with AB stacking, the in-plane diffusion is more favorable than the inter-plane jumping. However, the stacking faults made by sliding layer planes lowers the energy barrier of the inter-plane jumping and the effective frequency of the inter-plane jump is larger than that of the in-plane diffusion inside the graphene layers with the stacking faults. This suggests that hydrogen atoms can diffuse over a long distance inside few-layered graphene with stacking faults jumping consecutively between adjacent layers. | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.4, no.18, pp.9223 - 9228 | - |
dc.identifier.doi | 10.1039/c3ra46626d | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.scopusid | 2-s2.0-84893907059 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2787 | - |
dc.identifier.url | https://pubs.rsc.org/en/Content/ArticleLanding/2014/RA/c3ra46626d#!divAbstract | - |
dc.identifier.wosid | 000330800700043 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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