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DC Field | Value | Language |
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dc.citation.number | 10 | - |
dc.citation.startPage | 103502 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 115 | - |
dc.contributor.author | Wang, Weijie | - |
dc.contributor.author | Lee, Seung Min | - |
dc.contributor.author | Pouladi, Sara | - |
dc.contributor.author | Chen, Jie | - |
dc.contributor.author | Shervin, Shahab | - |
dc.contributor.author | Yoon, Seonno | - |
dc.contributor.author | Yum, Jung Hwan | - |
dc.contributor.author | Larsen, Eric S. | - |
dc.contributor.author | Bielawski, Christopher W. | - |
dc.contributor.author | Chatterjee, Bikramjit | - |
dc.contributor.author | Choi, Sukwon | - |
dc.contributor.author | Oh, Jungwoo | - |
dc.contributor.author | Ryou, Jae-Hyun | - |
dc.date.accessioned | 2023-12-21T18:42:12Z | - |
dc.date.available | 2023-12-21T18:42:12Z | - |
dc.date.created | 2019-10-01 | - |
dc.date.issued | 2019-09 | - |
dc.description.abstract | We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A similar to 20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.115, no.10, pp.103502 | - |
dc.identifier.doi | 10.1063/1.5108832 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-85072201249 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27819 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.5108832 | - |
dc.identifier.wosid | 000484671000005 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | GAN | - |
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