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DC Field | Value | Language |
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dc.citation.endPage | 4566 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 4559 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Song Yi | - |
dc.contributor.author | Heo, Jungwoo | - |
dc.contributor.author | Yoon, Yung Jin | - |
dc.contributor.author | Kim, Jae Won | - |
dc.contributor.author | Jang, Hyungsu | - |
dc.contributor.author | Walker, Bright | - |
dc.contributor.author | Kim, Jin Young | - |
dc.date.accessioned | 2023-12-21T19:13:39Z | - |
dc.date.available | 2023-12-21T19:13:39Z | - |
dc.date.created | 2019-05-16 | - |
dc.date.issued | 2019-04 | - |
dc.description.abstract | Among transparent metal oxide semiconductors, systems based on indium oxide currently deliver the best combination of electronic characteristics and optical transmittance, outperforming even the well-established polycrystalline silicon devices. Indium oxide has the unique property that uniform, amorphous films yield superior electronic properties compared to microcrystalline films; for this reason, Ga and Zn hetero-elements are usually added to disrupt crystallization and result in uniformly disordered films. However, dopants have a general tendency to increase the complexity and decrease the mobility of semiconductors and their addition might well be avoided if high-quality, amorphous In2O3 films could be grown without them. In this work, we show that this problem can be resolved by exploiting a synergistic interaction between solution-processed indium oxide (In2O3) and underlying tantalum pentoxide (Ta2O5) dielectric films. We observed that amorphous Ta2O5 inhibits crystallization of In2O3 leading to high-quality amorphous thin films with reduced oxygen deficiencies at the semiconductor/dielectric interface. Transparent Ta2O5/In2O3 TFTs with very low operating voltages were demonstrated with effective field-effect mobilities of up to 23.1 cm(2) V-1 s(-1) at only 3 V drain-source voltage (V-DS) using this approach. Additionally, the suppressed carrier density arising from reduced oxygen deficiencies reduced the drain current at 0 V gate bias (I-0) by six orders of magnitude from 0.25 mA to 10.8 nA, compared to a SiO2 reference device. These results highlight the importance of considering an underlying dielectric layer to maximize device performance. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.15, pp.4559 - 4566 | - |
dc.identifier.doi | 10.1039/c9tc00054b | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.scopusid | 2-s2.0-85064267905 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27419 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2019/TC/C9TC00054B#!divAbstract | - |
dc.identifier.wosid | 000465303700027 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Synergistic combination of amorphous indium oxide with tantalum pentoxide for efficient electron transport in low-power electronics | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | VOLTAGE | - |
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