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DC Field | Value | Language |
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dc.citation.startPage | 111082 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 216 | - |
dc.contributor.author | Sung, Young Hoon | - |
dc.contributor.author | Park, Jaemin | - |
dc.contributor.author | Choi, Eun Seo | - |
dc.contributor.author | Chung, Tae-Hoon | - |
dc.contributor.author | Lee, Tae Won | - |
dc.contributor.author | Kim, Hee Jun | - |
dc.contributor.author | Baik, Jeong Min | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2023-12-21T18:50:56Z | - |
dc.date.available | 2023-12-21T18:50:56Z | - |
dc.date.created | 2019-08-16 | - |
dc.date.issued | 2019-08 | - |
dc.description.abstract | In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS. | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.216, pp.111082 | - |
dc.identifier.doi | 10.1016/j.mee.2019.111082 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.scopusid | 2-s2.0-85069519428 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27376 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931719302382?via%3Dihub | - |
dc.identifier.wosid | 000487764900052 | - |
dc.language | 영어 | - |
dc.publisher | Elsevier B.V. | - |
dc.title | InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Hollow LEDs | - |
dc.subject.keywordAuthor | Hollow pattern | - |
dc.subject.keywordAuthor | Light emitting diode | - |
dc.subject.keywordAuthor | Micro LEDs | - |
dc.subject.keywordAuthor | Nano imprint | - |
dc.subject.keywordPlus | Diodes | - |
dc.subject.keywordPlus | Electroluminescence | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | III-V semiconductors | - |
dc.subject.keywordPlus | Light | - |
dc.subject.keywordPlus | Sapphire | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | X ray powder diffraction | - |
dc.subject.keywordPlus | Blue LED structure | - |
dc.subject.keywordPlus | Blue light emitting diodes | - |
dc.subject.keywordPlus | Hollow pattern | - |
dc.subject.keywordPlus | Luminescence efficiencies | - |
dc.subject.keywordPlus | Nano imprint | - |
dc.subject.keywordPlus | Nanoimprint techniques | - |
dc.subject.keywordPlus | Patterned sapphire substrate | - |
dc.subject.keywordPlus | Sapphire substrates | - |
dc.subject.keywordPlus | Light emitting diodes | - |
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