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Jeong, Changwook
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dc.citation.endPage 2705 -
dc.citation.number 4B -
dc.citation.startPage 2701 -
dc.citation.title JAPANESE JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 44 -
dc.contributor.author Kim, Young-Ta -
dc.contributor.author Hwang, Young-Nam -
dc.contributor.author Lee, Keun-Ho -
dc.contributor.author Lee, Se-Ho -
dc.contributor.author Jeong, Changwook -
dc.contributor.author Ahn, Su-Jin -
dc.contributor.author Yeung, Fai -
dc.contributor.author Koh, Gwan-Hyeob -
dc.contributor.author Jeong, Heong-Sik -
dc.contributor.author Chung, Won-Young -
dc.contributor.author Kim, Tai-Kyung -
dc.contributor.author Park, Young-Kwan -
dc.contributor.author Kim, Ki-Nam -
dc.contributor.author Kong, Jeong-Taek -
dc.date.accessioned 2023-12-22T10:36:57Z -
dc.date.available 2023-12-22T10:36:57Z -
dc.date.created 2019-07-11 -
dc.date.issued 2005-04 -
dc.description.abstract We present a new simulation methodology for analyzing programming characteristics of a chalcogenide based phase-change device, phase change random access memory (PRAM), which is a next-generation non-volatile memory. Using the new simulation methodology, we analyze the initialization of chalcogenide material (ICM) of the mechanism and propose the next generation PRAM scheme. Front the results of the phase change simulation, the process conditions for ICM for stable operation are presented. Also. the self-heating confined structure to overcome the inherent limitation of high operation power is proposed that resolves the operating power limitation associated with PRAM development. -
dc.identifier.bibliographicCitation JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2701 - 2705 -
dc.identifier.doi 10.1143/JJAP.44.2701 -
dc.identifier.issn 0021-4922 -
dc.identifier.scopusid 2-s2.0-21244498532 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27162 -
dc.identifier.url https://iopscience.iop.org/article/10.1143/JJAP.44.2701 -
dc.identifier.wosid 000229095700138 -
dc.language 영어 -
dc.publisher IOP PUBLISHING LTD -
dc.title Programming characteristics of phase change random access memory using phase change simulations -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article; Proceedings Paper -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor PRAM -
dc.subject.keywordAuthor phase change simulation -
dc.subject.keywordAuthor chalcogenide -
dc.subject.keywordAuthor ICM -
dc.subject.keywordAuthor confined structure -
dc.subject.keywordAuthor CFD-ACE -

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