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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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dc.citation.number 8 -
dc.citation.startPage 08H708 -
dc.citation.title JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 99 -
dc.contributor.author Jeong, W.C. -
dc.contributor.author Park, J.H. -
dc.contributor.author Oh, J.H. -
dc.contributor.author Koh, G.H. -
dc.contributor.author Jeong, G.T. -
dc.contributor.author Jeong, H.S. -
dc.contributor.author Kim, K. -
dc.date.accessioned 2023-12-22T10:07:00Z -
dc.date.available 2023-12-22T10:07:00Z -
dc.date.created 2019-07-11 -
dc.date.issued 2006-04 -
dc.description.abstract A switching method called by field assisted spin switching has been investigated. A field assisted spin switching consists of a metal line induced magnetic field and a spin switching through a magnetic tunnel junction. It is a variation of a current induced switching and assisted by the magnetic field induced by the current-carrying metal line. Various current paths have been tested to investigate how and how much the spin switching contributes to the overall switching and the results will be explained. A computer simulation has been complemented to measure the degree of the thermal effect in the switching. -
dc.identifier.bibliographicCitation JOURNAL OF APPLIED PHYSICS, v.99, no.8, pp.08H708 -
dc.identifier.doi 10.1063/1.2172578 -
dc.identifier.issn 0021-8979 -
dc.identifier.scopusid 2-s2.0-33646746984 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27158 -
dc.identifier.url https://aip.scitation.org/doi/10.1063/1.2172578 -
dc.identifier.wosid 000237404200433 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Field assisted spin switching in magnetic random access memory -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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