There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 17 | - |
dc.citation.startPage | 171920 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 90 | - |
dc.contributor.author | Kim, YoungKuk | - |
dc.contributor.author | Jeong, K. | - |
dc.contributor.author | Cho, M.-H. | - |
dc.contributor.author | Hwang, Uk | - |
dc.contributor.author | Jeong, H. S. | - |
dc.contributor.author | Kim, Kinam | - |
dc.date.accessioned | 2023-12-22T09:16:09Z | - |
dc.date.available | 2023-12-22T09:16:09Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2007-04 | - |
dc.description.abstract | Changes in the electronic structures of Ge2Sb2Te5 (GST) and N-doped Ge2Sb2Te5 film during the phase transition from an amorphous to a crystalline phase were studied using synchrotron radiation high-resolution x-ray photoemission spectroscopy. The changes in tetrahedral and octahedral coordinated Ge 3d peaks are closely related to the changes in the chemical bonding state of GST films. The metallic Sb peak in the Sb 4d spectra of annealed GST films demonstrates that the metallic Sb atoms become segregated during thermal treatment resulting in phase separation. The incorporation of nitrogen into the GST film affects its structure and chemical bonding state, resulting in the suppression of crystallization. The incorporation of nitrogen also increases the optical band gap of the film due to the formation of a nitride. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.90, no.17, pp.171920 | - |
dc.identifier.doi | 10.1063/1.2722203 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-34248571844 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27152 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2722203 | - |
dc.identifier.wosid | 000246568600045 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | AMORPHOUS GE2SB2TE5 | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | FILMS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.