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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 5269 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 5263 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Ryoo, Kyung-Chang | - |
dc.contributor.author | Oh, Jeong-Hoon | - |
dc.contributor.author | Jung, Sunghun | - |
dc.contributor.author | Jeong, Hongsik | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2023-12-22T05:06:23Z | - |
dc.date.available | 2023-12-22T05:06:23Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2012-07 | - |
dc.description.abstract | An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AlOx insertion layer between the Ir/NiO interface. To elucidate the uniformity improvement of our bilayer structure, the conducting-defect effects in the resistive cell were also investigated using a random circuit breaker (RCB) simulation model. It has been verified that the forming and set characteristics are more effectively improved because the conducting-defect ratio in the insertion layer region is low, therefore making it more advantageous for a filament path controllability. Using the optimal oxygen contents in both the insertion layer and the resistive cell, it was confirmed that a significant reduction of up to 0.15 mA of the reset current (/(RESET)) is possible compared to the conventional cell. These results indicate that new Al insertion has a large contribution to the reset and forming processes. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5263 - 5269 | - |
dc.identifier.doi | 10.1166/jnn.2012.6234 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-84865140574 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27136 | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000007/art00024;jsessionid=9be09jo7nm8o7.x-ic-live-02 | - |
dc.identifier.wosid | 000307604700024 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | Unipolar | - |
dc.subject.keywordAuthor | Resistive Switching | - |
dc.subject.keywordAuthor | Reset Current | - |
dc.subject.keywordAuthor | Forming Voltage | - |
dc.subject.keywordAuthor | Low Power | - |
dc.subject.keywordAuthor | Al Inserted | - |
dc.subject.keywordPlus | SWITCHING MEMORY | - |
dc.subject.keywordPlus | NIO FILMS | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | DEVICES | - |
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