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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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dc.citation.endPage 290 -
dc.citation.startPage 284 -
dc.citation.title MICROELECTRONICS RELIABILITY -
dc.citation.volume 63 -
dc.contributor.author Kwon, Yongwoo -
dc.contributor.author Park, Byoungnam -
dc.contributor.author Yang, Heesun -
dc.contributor.author Hwang, Jin-Ha -
dc.contributor.author Kang, Dae-Hwan -
dc.contributor.author Jeong, Hongsik -
dc.contributor.author Song, Yunheub -
dc.date.accessioned 2023-12-21T23:16:08Z -
dc.date.available 2023-12-21T23:16:08Z -
dc.date.created 2019-07-11 -
dc.date.issued 2016-08 -
dc.description.abstract Data retention statistics of phase-change memory with two representative cell schemes, confined and mushroom cells, were investigated using phase-field method that can correctly model successive nucleation events and their. growth, simultaneously. Several directions of cell structure engineering are suggested. An interesting point is that reducing only one lateral dimension below a characteristic length can improve the data retention. Most importantly, it was found that the cumulative distribution of the retention time is Weibull for the mushroom cells while that is lognormal for,the confined cells. -
dc.identifier.bibliographicCitation MICROELECTRONICS RELIABILITY, v.63, pp.284 - 290 -
dc.identifier.doi 10.1016/j.microrel.2016.04.007 -
dc.identifier.issn 0026-2714 -
dc.identifier.scopusid 2-s2.0-84966711829 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27128 -
dc.identifier.url https://www.sciencedirect.com/science/article/pii/S0026271416300828?via%3Dihub -
dc.identifier.wosid 000384776200037 -
dc.language 영어 -
dc.publisher PERGAMON-ELSEVIER SCIENCE LTD -
dc.title Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied -
dc.relation.journalResearchArea Engineering; Science & Technology - Other Topics; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Phase-change memory -
dc.subject.keywordAuthor Data retention -
dc.subject.keywordAuthor Variability -
dc.subject.keywordAuthor Nucleation and growth -
dc.subject.keywordAuthor Phase-field method -
dc.subject.keywordPlus CRYSTAL NUCLEATION -
dc.subject.keywordPlus CRYSTALLIZATION -
dc.subject.keywordPlus KINETICS -
dc.subject.keywordPlus RESISTANCE -
dc.subject.keywordPlus SYSTEM -
dc.subject.keywordPlus IMPACT -

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