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DC Field | Value | Language |
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dc.citation.endPage | 2695 | - |
dc.citation.number | 4B | - |
dc.citation.startPage | 2691 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 44 | - |
dc.contributor.author | Yeung, Fai | - |
dc.contributor.author | Ahn, Su-Jin | - |
dc.contributor.author | Hwang, Young-Nam | - |
dc.contributor.author | Jeong, Changwook | - |
dc.contributor.author | Song, Yoon-Jong | - |
dc.contributor.author | Lee, Su-Youn | - |
dc.contributor.author | Lee, Se-Ho | - |
dc.contributor.author | Ryoo, Kyung-Chang | - |
dc.contributor.author | Park, Jae-Hyun | - |
dc.contributor.author | Shin, Jae-Min | - |
dc.contributor.author | Jeong, Won-Cheol | - |
dc.contributor.author | Kim, Young-Tae | - |
dc.contributor.author | Koh, Gwan-Hyeob | - |
dc.contributor.author | Jeong, Gi-Tae | - |
dc.contributor.author | Jeong, Hong-Sik | - |
dc.contributor.author | Kim, Kinam | - |
dc.date.accessioned | 2023-12-22T10:36:58Z | - |
dc.date.available | 2023-12-22T10:36:58Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2005-04 | - |
dc.description.abstract | Phase-change random access memory is considered a potential challenger for conventional memories, such as dynamic random access memory and flash memory due to its numerous advantages. Nevertheless, high reset current is the ultimate problem in developing high-density phase-change random access memory (PRAM). We focus on the adoption of Ge(2)Sb(2)Te(5) confined structures to achieve lower reset currents. By changing from a normal to a GST confined structure, the reset current drops to as low as 0.8 mA. Eventually, our integrated 64 Mb PRAM based on 0.18 mu m CMOS technology offers a large sensing margin: R(reset) similar to 200 k Omega and R(set) similar to 2 k Omega, as well as reasonable reliability: an endurance of 1.0 x 10(9) cycles and a retention time of 2 years at 85 degrees C. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2691 - 2695 | - |
dc.identifier.doi | 10.1143/JJAP.44.2691 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-21244464284 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27112 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.44.2691 | - |
dc.identifier.wosid | 000229095700136 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Ge(2)Sb(2)Te(5) confined structures and integration of 64Mb phase-change random access memory | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 64 Mb PRAM | - |
dc.subject.keywordAuthor | confined structure | - |
dc.subject.keywordAuthor | low reset current | - |
dc.subject.keywordAuthor | integration | - |
dc.subject.keywordAuthor | reliability | - |
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