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- Suh, Joonki
- Semiconductor Nanotechnology Lab.
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Work function engineering of single layer graphene by irradiation-induced defects
- Author(s)
- Kim, Jong-Hun, Hwang, Jin Heui, Suh, Joonki, Tongay, Sefaattin, Kwon, Sangku, Hwang, C. C., Wu, Junqiao, Park, Jeong Young
- Issued Date
- 2013-10
- Citation
- APPLIED PHYSICS LETTERS, v.103, no.17, pp.171604
- Abstract
- We report the tuning of electrical properties of single layer graphene by a-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Keyword
- MONOLAYER GRAPHENE, RAMAN-SPECTROSCOPY, FORCE MICROSCOPY, EXCITATION, FRICTION, STATES, FILMS, OXIDE
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