File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Suh, Joonki
- Semiconductor Nanotechnology Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 2930 | - |
| dc.citation.number | 15 | - |
| dc.citation.startPage | 2923 | - |
| dc.citation.title | ADVANCED MATERIALS | - |
| dc.citation.volume | 28 | - |
| dc.contributor.author | Ko, Changhyun | - |
| dc.contributor.author | Lee, Yeonbae | - |
| dc.contributor.author | Chen, Yabin | - |
| dc.contributor.author | Suh, Joonki | - |
| dc.contributor.author | Fu, Deyi | - |
| dc.contributor.author | Suslu, Aslihan | - |
| dc.contributor.author | Lee, Sangwook | - |
| dc.contributor.author | Clarkson, James David | - |
| dc.contributor.author | Choe, Hwan Sung | - |
| dc.contributor.author | Tongay, Sefaatin | - |
| dc.contributor.author | Ramesh, Ramamoorthy | - |
| dc.contributor.author | Wu, Junqiao | - |
| dc.date.accessioned | 2023-12-21T23:47:49Z | - |
| dc.date.available | 2023-12-21T23:47:49Z | - |
| dc.date.created | 2019-07-17 | - |
| dc.date.issued | 2016-04 | - |
| dc.description.abstract | Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. | - |
| dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.28, no.15, pp.2923 - 2930 | - |
| dc.identifier.doi | 10.1002/adma.201504779 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.scopusid | 2-s2.0-84976240174 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27093 | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201504779 | - |
| dc.identifier.wosid | 000374336700009 | - |
| dc.language | 영어 | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
| dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | 2D materials | - |
| dc.subject.keywordAuthor | ferroelectrics | - |
| dc.subject.keywordAuthor | field-effect transistors | - |
| dc.subject.keywordAuthor | nonvolatile memory | - |
| dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | FEW-LAYER MOS2 | - |
| dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
| dc.subject.keywordPlus | HETEROSTRUCTURES | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | POLARIZATION | - |
| dc.subject.keywordPlus | NANOSHEET | - |
| dc.subject.keywordPlus | WS2 | - |
| dc.subject.keywordPlus | MODULATION | - |
| dc.subject.keywordPlus | GRAPHENE | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.